GaAs pHEMT Low Noise Amplifier 7 – 10 GHz
General Description
MWL010 is a GaAs pHEMT process design and manufacture, X band low noise amplifier. The amplifier can achieve a small signal gain of 37 dB in the operating frequency band of 7-10 GHz. The noise coefficient is only 0.8 dB. The output compression point of 1 dB is + 11 dBm. Vdd is powered by +5V, Vg=+0.6V.
Features
Noise Figure:0.8 dB
Gain:37 dB;
Output P1dB:+11dBm
Supply Current:67mA@+5V
Functional Diagram( Typical bond:100x100,unit:um)
Test Results
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Milliway is a design, development and supplier of RF/microwave integrated circuit chips, modules and system solutions.